T. Masuda, Y. Hara, T. Ikeda, K. Uchida, Y. Saito,
S. Harada, T. Hatayama, J. Wada, T. Hiyoshi, H. Yamamoto, M. Furumai,
T. Kiyama and H. Watanabe,
"Key technologies supporting high performance and reliability of SiC VMOSFET", IEEE Journal of the Electron Devices Society, pp 1~5 (2025).
M. Hara, K. Hirahara, K. Tomigahara, M. Nozaki, T. Kobayashi, and H. Watanabe,
"Generation process of hole traps thermally induced in SiO2/GaOx/p-GaN metal-oxide-semiconductor structures", Journal of Applied Physics
, 138, (5), pp 055705-1~6 (2025).
M. Uenuma, R. Atsumi, K. Onishi, H. Tomita, S. Yamada, Y. Yamada, M. Yoshida, Z. Sun, Y. Hashimoto, M. N. Fujii,T. Kobayashi, H. Watanabe, T. Matsushita, and Y. Uraoka,
"Effect of Post-Deposition Annealing on Atomic Ordered Structure of Gallium Oxide Layer at SiO2/GaN Interface", physica status solidi (b), Early View, pp 2500025-1~6 (2025).
T. Nakanuma, H. Toyama, K. Tahara, K. Kutsuki, H. Watanabe, and T. Kobayashi,
"Design of annealing conditions for the formation of isolated single-photon emitters at SiO2/SiC interfaces", Journal of Applied Physics
, 137, (20), pp 205702-1~7 (2025).
K. Onishi, T. Nakanuma, H. Toyama, K. Tahara, K. Kutsuki, H. Watanabe and T. Kobayashi,
"Insight into the energy level structure and luminescence process of color centers at SiO2/SiC interfaces", APL Materials, 13, (2), pp 021119-1~8 (2025).[プレスリリース]
M. Hara, T. Kobayashi, M. Nozaki and H. Watanabe,
"GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition", Applied Physics Letters
, 126, (2), pp 022113-1~6 (2025).
H. Watanabe, T. Kobayashi, H. Iwamoto, T. Nakanuma, H. Hirai and M. Sometani,
"Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes", Japanese Journal of Applied Physics, 64, (1), pp 010801-1~9 (2025).
H. Fujimoto, T. Kobayashi, S. Kamihata, K. Hachiken, M. Hara, and H. Watanabe,
"Fabrication of high-performance SiC MOSFETs via 2-step annealing in H2/Ar gas mixtures: A novel method without interface nitridation"
International Conference on Silicon Carbide and Related Materials (ICSCRM2025), MO_P43, Sep.15,
(Busan, Korea, Sep.14-19, 2025).
S. Iwamoto, M. Hara, H. Watanabe, and T. Kobayashi,
"Theoretical study of group III–VII impurity-vacancy centers in 4H-SiC as a potential qubit"
International Conference on Silicon Carbide and Related Materials (ICSCRM2025), Session15A-4, Sep.17,
(Busan, Korea, Sep.14-19, 2025).
K. Onishi, T. Nakanuma, H. Toyama, K. Tahara, K. Kutsuki, M. Hara, H. Watanabe, and T. Kobayashi,
"Characterization of color centers at SiO2/SiC interfaces: Energy level identification and discussion of their origins"
International Conference on Silicon Carbide and Related Materials (ICSCRM2025), WE_P88, Sep.17,
(Busan, Korea, Sep.14-19, 2025).
K. Hachiken, T. Kobayashi, H. Fujimoto, M. Hara, and H. Watanabe,
"Critical role of post-deposition annealing on the improvements in SiC MOS structures formed by 2-step H /Ar annealing process"
International Conference on Silicon Carbide and Related Materials (ICSCRM2025), Session 16B-5, Sep.17,
(Busan, Korea, Sep.14-19, 2025).
Y. Kaneko, T. Nakanuma, H. Toyama, K. Tahara, K. Kutsuki, H. Watanabe and T. Kobayashi,
"Impact of oxidation temperature on the formation and annihilation of color centers at SiO2/SiC interfaces"
International Conference on Silicon Carbide and Related Materials (ICSCRM2025), TU_P87, Sep.16,
(Busan, Korea, Sep.14-19, 2025).
T. Li, L. Zhan, Y. Hayakawa, T. Kobayashi, H. Watanabe, T. Shimura,
"Fabrication and Optical Properties of Tensile-Strained Ge Microdisk Resonators via Laser-Induced Liquid-Phase Crystallization"
2025 International Conference on Solid State Devices and Materials (SSDM2025), PS-05-08, Sep.17,
(Kanagawa, Japan, Sep.15-18, 2025).
M. Hara, M. Nozaki, T. Kobayashi, H. Watanabe,
"Tunneling current in Schottky structures formed on heavily doped n-type GaN"
15th International Conference on Nitride Semiconductors (ICNS-15), ED-Thu-P3, Jul.10,
(Malmö, Sweden, Jul.6-11, 2025).
M. Hara, K. Hirahara, M. Nozaki, T. Kobayashi, H. Watanabe,
"Thermal generation rate of hole traps in GaN MOS structures"
15th International Conference on Nitride Semiconductors (ICNS-15), ED-Tue-P36, Jul. 8,
(Malmö, Sweden, Jul.6-11, 2025).
Y. Sakagami , M. Hara, M. Nozaki, T. Kobayashi, H. Watanabe,
"Reduction of hole traps in GaN MOS structures by introducing Mg atoms near SiO2/GaN interfaces"
15th International Conference on Nitride Semiconductors (ICNS-15), ED-Mon-P52, Jul. 7,
(Malmö, Sweden, Jul.6-11, 2025).