2025年

学術論文 / Journal Papers

1. M. Uenuma, R. Atsumi, K. Onishi, H. Tomita, S. Yamada, Y. Yamada, M. Yoshida, Z. Sun, Y. Hashimoto, M. N. Fujii,T. Kobayashi, H. Watanabe, T. Matsushita, and Y. Uraoka,
   "Effect of Post-Deposition Annealing on Atomic Ordered Structure of Gallium Oxide Layer at SiO2/GaN Interface",
   physica status solidi (b), Early View, pp 2500025-1~6 (2025).
2. T. Nakanuma, H. Toyama, K. Tahara, K. Kutsuki, H. Watanabe, and T. Kobayashi,
   "Design of annealing conditions for the formation of isolated single-photon emitters at SiO2/SiC interfaces",
   Journal of Applied Physics , 137, (20), pp 205702-1~7 (2025).
3. M. Hara, T. Nabatame, Y. Irokawa, T. Sawada, M. Miyamoto, H. Miura, T. Kimoto, and Y. Koide,
   "A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures",
   Materials Science in Semiconductor Processing, 196, pp 109606-1~7 (2025).
4. M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
   "Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC",
   Journal of Applied Physics, 137, (13), pp 135704-1~9 (2025).
5. K. Onishi, T. Nakanuma, H. Toyama, K. Tahara, K. Kutsuki, H. Watanabe and T. Kobayashi,
   "Insight into the energy level structure and luminescence process of color centers at SiO2/SiC interfaces",
   APL Materials, 13, (2), pp 021119-1~8 (2025). [プレスリリース]
6. M. Hara, T. Kobayashi, M. Nozaki and H. Watanabe,
   "GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition",
   Applied Physics Letters , 126, (2), pp 022113-1~6 (2025).
7. H. Watanabe, T. Kobayashi, H. Iwamoto, T. Nakanuma, H. Hirai and M. Sometani,
   "Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes",
   Japanese Journal of Applied Physics, 64, (1), pp 010801-1~9 (2025).
8. T. Kobayashi, K. Maeda, M. Hara, M. Nozaki and H. Watanabe,
   "Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing",
   Applied Physics Letters, 126, (1), pp 012108-1~4 (2025).

国際学会 / International Conferences

1. M. Hara, M. Nozaki, T. Kobayashi, H. Watanabe,
   "Tunneling current in Schottky structures formed on heavily doped n-type GaN"
   15th International Conference on Nitride Semiconductors (ICNS-15), ED-Thu-P3, Jul.10,
   (Malmö, Sweden, Jul.6-11, 2025).
2. M. Hara, K. Hirahara, M. Nozaki, T. Kobayashi, H. Watanabe,
   "Thermal generation rate of hole traps in GaN MOS structures"
   15th International Conference on Nitride Semiconductors (ICNS-15), ED-Tue-P36, Jul. 8,
   (Malmö, Sweden, Jul.6-11, 2025).
3. Y. Sakagami , M. Hara, M. Nozaki, T. Kobayashi, H. Watanabe,
   "Reduction of hole traps in GaN MOS structures by introducing Mg atoms near SiO2/GaN interfaces"
   15th International Conference on Nitride Semiconductors (ICNS-15), ED-Mon-P52, Jul. 7,
   (Malmö, Sweden, Jul.6-11, 2025).

国内学会 / Domestic Conferences

1. 原 征大, 平原 賢治, 野崎 幹人, 小林 拓真, 渡部 平司,
   "熱処理によるSiO2/p型GaN MOS界面正孔トラップの生成速度",
   2025年 第72回応用物理学会春季学術講演会, 17a-K301-5, Mar.17,
   (東京理科大学 野田キャンパス＋オンライン, March 14-17, 2025)
2. 前田 兼成, 小林 拓真, 原 征大, 野崎 幹人, 渡部 平司,
   "絶縁膜堆積後熱処理による高品質SiO2/β–Ga2O3 MOS構造の形成",
   2025年 第72回応用物理学会春季学術講演会, 16p-Y1311-6, Mar.16,
   (東京理科大学 野田キャンパス＋オンライン, March 14-17, 2025)
3. 横山 義希, 矢野 裕司, 染谷 満, 平井 悠久, 渡部 平司, 梅田 享英, 堀内 颯介, 福永 博生, 島袋 聞多,
   "時間分解スピン依存チャージポンピング分光の開発と4H-SiC MOSFETsへの適用",
   2025年 第72回応用物理学会春季学術講演会, 16a-K301-10, Mar.16,
   (東京理科大学 野田キャンパス＋オンライン, March 14-17, 2025)

受賞 / Awards

1. 大阪大学工業会賞
   大西　健太郎
   "ワイドギャップ半導体の欠陥制御と電子・量子デバイス応用,"
   March 10, 2025