ACHIEVEMENTS

2025年

学術論文 / Journal Papers

T. Kobayashi, H. Fujimoto, S. Kamihata, K. Hachiken, M. Hara and H. Watanabe,
"Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures",
Applied Physics Express , 18, (8), pp 081002-1~4 (2025). [プレスリリース]
M. Hara, K. Hirahara, K. Tomigahara, M. Nozaki, T. Kobayashi, and H. Watanabe,
"Generation process of hole traps thermally induced in SiO2/GaOx/p-GaN metal-oxide-semiconductor structures",
Journal of Applied Physics , 138, (5), pp 055705-1~6 (2025).
M. Uenuma, R. Atsumi, K. Onishi, H. Tomita, S. Yamada, Y. Yamada, M. Yoshida, Z. Sun, Y. Hashimoto, M. N. Fujii,T. Kobayashi, H. Watanabe, T. Matsushita, and Y. Uraoka,
"Effect of Post-Deposition Annealing on Atomic Ordered Structure of Gallium Oxide Layer at SiO2/GaN Interface",
physica status solidi (b), Early View, pp 2500025-1~6 (2025).
T. Nakanuma, H. Toyama, K. Tahara, K. Kutsuki, H. Watanabe, and T. Kobayashi,
"Design of annealing conditions for the formation of isolated single-photon emitters at SiO2/SiC interfaces",
Journal of Applied Physics , 137, (20), pp 205702-1~7 (2025).
M. Hara, T. Nabatame, Y. Irokawa, T. Sawada, M. Miyamoto, H. Miura, T. Kimoto, and Y. Koide,
"A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures",
Materials Science in Semiconductor Processing, 196, pp 109606-1~7 (2025).
M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
"Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC",
Journal of Applied Physics, 137, (13), pp 135704-1~9 (2025).
K. Onishi, T. Nakanuma, H. Toyama, K. Tahara, K. Kutsuki, H. Watanabe and T. Kobayashi,
"Insight into the energy level structure and luminescence process of color centers at SiO2/SiC interfaces",
APL Materials, 13, (2), pp 021119-1~8 (2025). [プレスリリース]
M. Hara, T. Kobayashi, M. Nozaki and H. Watanabe,
"GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition",
Applied Physics Letters , 126, (2), pp 022113-1~6 (2025).
H. Watanabe, T. Kobayashi, H. Iwamoto, T. Nakanuma, H. Hirai and M. Sometani,
"Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes",
Japanese Journal of Applied Physics, 64, (1), pp 010801-1~9 (2025).
T. Kobayashi, K. Maeda, M. Hara, M. Nozaki and H. Watanabe,
"Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing",
Applied Physics Letters, 126, (1), pp 012108-1~4 (2025).

国際学会 / International Conferences

M. Hara, M. Nozaki, T. Kobayashi, H. Watanabe,
"Tunneling current in Schottky structures formed on heavily doped n-type GaN"
15th International Conference on Nitride Semiconductors (ICNS-15), ED-Thu-P3, Jul.10,
(Malmö, Sweden, Jul.6-11, 2025).
M. Hara, K. Hirahara, M. Nozaki, T. Kobayashi, H. Watanabe,
"Thermal generation rate of hole traps in GaN MOS structures"
15th International Conference on Nitride Semiconductors (ICNS-15), ED-Tue-P36, Jul. 8,
(Malmö, Sweden, Jul.6-11, 2025).
Y. Sakagami , M. Hara, M. Nozaki, T. Kobayashi, H. Watanabe,
"Reduction of hole traps in GaN MOS structures by introducing Mg atoms near SiO2/GaN interfaces"
15th International Conference on Nitride Semiconductors (ICNS-15), ED-Mon-P52, Jul. 7,
(Malmö, Sweden, Jul.6-11, 2025).

国内学会 / Domestic Conferences

原征大, 平原賢治, 野崎幹人, 小林拓真, 渡部平司,
"熱処理によるSiO2/p型GaN MOS界面正孔トラップの生成速度",
2025年第72回応用物理学会春季学術講演会, 17a-K301-5, Mar.17,
(東京理科大学野田キャンパス＋オンライン, March 14-17, 2025)
前田兼成, 小林拓真, 原征大, 野崎幹人, 渡部平司,
"絶縁膜堆積後熱処理による高品質SiO2/β–Ga2O3 MOS構造の形成",
2025年第72回応用物理学会春季学術講演会, 16p-Y1311-6, Mar.16,
(東京理科大学野田キャンパス＋オンライン, March 14-17, 2025)
横山義希, 矢野裕司, 染谷満, 平井悠久, 渡部平司, 梅田享英, 堀内颯介, 福永博生, 島袋聞多,
"時間分解スピン依存チャージポンピング分光の開発と4H-SiC MOSFETsへの適用",
2025年第72回応用物理学会春季学術講演会, 16a-K301-10, Mar.16,
(東京理科大学野田キャンパス＋オンライン, March 14-17, 2025)

受賞 / Awards

大阪大学工業会賞
大西　健太郎
"ワイドギャップ半導体の欠陥制御と電子・量子デバイス応用,"
March 10, 2025