N. H. Ngo, A. Q. Nguyen, F. M. Bufler, Y. Kamakura, H. Mutoh, T. Shimura, T. Hosoi, H. Watanabe, P. Matagne, K. Shimonomura, K. Takehara, E. Charbon and T. G. Etoh,
"Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light",
Sensors, 20, (23), 6895(2020).
T. Kimoto, and H. Watanabe,
"Defect engineering in SiC technology for high-voltage power devices",
Applied Physics Express, 13, (12) pp 120101-1~44(2020).
H. Mizobata, Y. Wada, M. Nozaki, T. Hosoi, T. Shimura, and H. Watanabe,
"Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices",
Applied Physics Express, 13, (8) pp 081001-1~4(2020).
H. Takeda, M. Sometani, T. Hosoi, T. Shimura, H. Yano and H. Watanabe,
"Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement",
Materials Science Forum, 1004, pp 620~626(2020).
M. Nozaki, D. Terashima, A. Yoshigoe, T. Hosoi, T. Shimura, and H. Watanabe,
"Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma",
Japanese Journal of Applied Physics, 59, (SM) pp SMMA07-1~7(2020).
Y. Wada, M. Nozaki, T. Hosoi, T. Shimura, and H. Watanabe,
"Insight into gate dielectric reliability and stability of SiO2/GaN MOS devices",
Japanese Journal of Applied Physics, 59, (SM) pp SMMA03-1~5(2020).
T. Umeda, Y. Nakano, E. Higa, T. Okuda and T. Kimoto, T. Hosoi and H. Watanabe, M. Sometani and S. Harada,
"Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces",
Journal of Applied Physics, 127, (14) pp 145301-1~8(2020).
A. Uedono, W. Ueno, T. Yamada, T. Hosoi, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, and H. Watanabe,
"Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams",
Journal of Applied Physics, 127, (5) pp 054503-1~8(2020).
T. Hosoi, S. Azumo, Y. Kashiwagi, S. Hosaka, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Kimoto, T. Shimura, and H. Watanabe,
"Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET",
Japanese Journal of Applied Physics, 59, (2) pp 021001-1~8(2020).
国際学会 / International Conferences
H. Watanabe, T. Hosoi, M. Nozaki, H. Mizobata, and T. Shimura,
"Gate Stack Technology for Advanced GaN-based MOS Devices" (Invited),
2020 International Conference on Solid State Devices and Materials (SSDM 2020), K-4-01, Sep.29,
(Held online, September 27-30, 2020)
国内学会 / Domestic Conferences
細井 卓治,
"ワイドバンドギャップ半導体MOSデバイスにおけるゲート酸化膜破壊",
先進パワー半導体分科会 第7回講演会, Dec.8,
(オンライン開催, December 8-10, 2020)
K. Moges, T. Hosoi, T. Shimura, H. Watanabe,
"4H-SiC CMOS inverters fabricated by ultrahigh-temperature gate oxidation and forming gas annealing",
先進パワー半導体分科会 第7回講演会, IB-10, Dec.9,
(オンライン開催, December 8-10, 2020)