The Faculty name which our laboratory belongs to is changed to
Department of Precision Engineering
due to the reorganization from Apr. 2020.

Humanity is confronted with many global-scale issues that include depletion of fossil energy and other natural resources, food shortage and population explosion, climate change and natural disaster, and urban development and poverty. Technology has the potential for significant impact to overcome these challenges and build a sustainable society. In response to the hopes, dreams, and wishes that people find through family, friends, and community, we believe that science and technology should be developed to enable humanity to responsibly coexist and thrive with nature in environmental harmony. To realize a sustainable and prosperous future, we aim to facilitate technological innovation by designing new materials, combining dissimilar materials, and introducing new structures with wide-range of capabilities contributing to next-generation of green nanoelectronics.

News & Topics

6 May 2022 Updateon Publications
12 Apr 2022 Updateon Members
1 Apr 2022 Updateon Members
30 Mar 2022 InfoWe gave below presentations at IRPS 2022 which was held hybrid from March 27-31.
・Mr. Terao (Research Fellow): Characterization of Electron Traps in Gate Oxide of SiC MOS Capacitors
・Mr. Nakanuma (M1): Investigation of reliability of NO nitrided SiC(1-100) MOS devices
25 Mar 2022 InfoProf. Watanabe and Assistant Prof. Kobayashi gave commemorative speechs and other participants gave below presentations at The 69th JSAP Spring Meeting 2022 which was held hybrid from March 22-26.
・Prof. Watanabe: Defect Engineering in SiC Technology for High-voltage Power Devices
・Assistant Prof. Kobayashi: Formation of high-quality SiC/SiO2 interfaces by suppressing SiC oxidation
・Assistant Prof. Mizobata: Effects of Substrate Polarity and Acceptor Concentrations on Electrical Properties of p-GaN MOS Devices Fabricated by Mg-Implantation and Ultra-High-Pressure Annealing
・Mr. Tomigahara (M1): Evaluation of Hole Traps in GaN MOS Structures by Ultraviolet Light Illumination
・Mr. Fujimoto (M1): Effect of Excimer Ultraviolet Light Irradiation on NO-Nitrided SiC MOS Devices
・Mr. Mikake (M1): Formation of High-quality SiO2/GaN MOS Structures by Controlling Oxidation and Reduction Processes
・Mr. Onishi (B3): Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO2 Dielectrics
・Mr. Ogawa (TORAY): Characterization for trap states of SiO2/GaN interfaces and SiO2 films by DLTS
17 Mar 2022 Updateon Publications
9 March 2022 InfoMr. Nakanuma (M1) gave an Invited Talk at The Electric Divice Workshop held by The Institute of Electrical Engineers of Japan, 9 March.
3 Mar 2022 Updateon Publications
24 Feb 2022 Updateon Publications
16 Feb 2022 Updateon Publications
31 Jan 2022 InfoGuest prof. Eto gave an Invited Talk at The 174th Workshop of The 145th Committee on Processing and Characterization of Crystals of JSPS which was held online, 31 January.
29 Jan 2022 InfoWe gave below presentations at EDIT 27 which was held online from January 28-29, and Mr. Nakanuma (M1) received an award for his presentation. Congratulations!
・Assistant Prof. Mizobata: Inhibition of Mg Activation in P-Type GaN Caused by Thin AlGaN Capping Layer and Impact of Designing Hydrogen Desorption Pathway
・Mr. Tabuchi (M1): Laser-induced Liquid-phase Crystallization of GeSn Wires on Quartz Substrate Covered with Light-absorbing Layer
・Mr. Nakanuma (M1): Evaluation of Leakage Current and Threshold Voltage Shift in NO Nitrided 4H-SiC(11-20) MOS Devices
14 Jan 2022 InfoAssociate prof. Shimura gave an Invited Talk at The 42nd Annual Meeting of The Laser Society of Japan which was held online, 12-14 January.
11 Jan 2022 InfoProf. Watanabe gave the following Plenary Talk at IWSingularity 2022 / ISWGPDs 2022 which was held hybrid, 11-13 January.
"Gate stack technology for advanced wide bandgap power electronics"
11 Jan 2022 InfoThe following APEX review paper, which Prof. Watanabe co-authored with Prof. Kimoto of Kyoto University last year, has been downloaded more than 10,000 times!
"Defect engineering in SiC technology for high-voltage power devices"

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